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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD439 BD441 DESCRIPTION With TO-126 package Complement to type BD440,BD442 APPLICATIONS For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage VCEO VEBO IC ICM IB PC Tj Tstg HAN INC Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature SEM GE Open emitter BD441 BD439 Open base BD441 BD439 OND IC TOR UC VALUE 60 80 60 80 UNIT V V Open collector 5 4 7 1 V A A A W ae ae TC=25ae 36 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage BD439 IC=0.1A; IB=0 BD441 BD439 ICBO Collector cut-off current BD441 BD439 ICES Collector cut-off current BD441 IEBO Emitter cut-off current VCB=80V; IE=0 VCE=60V; VBE=0 VCB=60V; IE=0 CONDITIONS IC=2A; IB=0.2A IC=10mA ; VCE=5V IC=2A ; VCE=1V BD439 BD441 SYMBOL VCEsat VBE-1 VBE-2 MIN TYP. MAX 0.8 UNIT V V 0.58 1.5 60 V VCEO(SUS) Collector-emitter sustaining voltage V 80 100 |I A 100 VCE=80V; VBE=0 VEB=5V; IC=0 |I A hFE-1 IN DC current gain BD439 BD441 hFE-2 DC current gain hFE-3 DC current gain ANG CH BD439 EMIC ES IC=0.5A ; VCE=1V IC=2A ; VCE=1V IC=250mA; VCE=1V IC=10mA ; VCE=5V OND 20 15 TOR UC 1 130 140 mA 40 25 15 3 MHz BD441 fT Transition frequency 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD439 BD441 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
Price & Availability of BD441
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